Invention Grant
- Patent Title: Electron temperature measurement method, electron temperature measurement program for implementing the method, and storage medium storing the electron temperature measurement program
- Patent Title (中): 电子温度测量方法，用于实现该方法的电子温度测量程序和存储电子温度测量程序的存储介质
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Application No.: US11387813Application Date: 2006-03-24
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Publication No.: US07691226B2Publication Date: 2010-04-06
- Inventor: Kazuki Denpoh
- Applicant: Kazuki Denpoh
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-086285 20050324
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C23C14/00 ; C23C16/00
Abstract:
An electron temperature measurement method that enables an electron temperature as a plasma parameter to be measured precisely.A plasma is produced in a chamber 11 such that a wafer W is subjected to reactive ion etching therein. An ion energy distribution in the chamber 11 is measured. An ion energy distribution in the chamber 11 is simulated based on a set electron temperature. The measured ion energy distribution and the simulated ion energy distribution are compared. The electron temperature of the plasma is estimated based on results of the comparison mentioned above.
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