Invention Grant
- Patent Title: Method for treatment of a gas stream containing silicon tetrafluoride and hydrogen chloride
- Patent Title (中): 用于处理含有四氟化硅和氯化氢的气流的方法
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Application No.: US12202807Application Date: 2008-09-02
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Publication No.: US07691351B2Publication Date: 2010-04-06
- Inventor: Vithal Revankar , Jameel Ibrahim
- Applicant: Vithal Revankar , Jameel Ibrahim
- Applicant Address: US MO St. Peters
- Assignee: MEMC Electronic Materials, Inc.
- Current Assignee: MEMC Electronic Materials, Inc.
- Current Assignee Address: US MO St. Peters
- Agency: Amstrong Teasdale LLP
- Main IPC: B01D53/50
- IPC: B01D53/50 ; B01D53/68 ; B01D53/70
Abstract:
The present invention is directed to a method for treatment of a gas stream comprising silicon tetrafluoride and hydrogen chloride. For example, the present invention is directed to a method for treatment of such a gas stream that involves contacting the gas stream with a metal that reacts with the hydrogen chloride to provide a treated gas stream having reduced hydrogen chloride content. The present invention is further directed to methods for subjecting silicon tetrafluoride and hydrogen chloride-containing gas streams to elevated pressure to provide gas streams suitable for transport.
Public/Granted literature
- US20090092530A1 METHOD FOR TREATMENT OF A GAS STREAM CONTAINING SILICON TETRAFLUORIDE AND HYDROGEN CHLORIDE Public/Granted day:2009-04-09
Information query
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