Invention Grant
- Patent Title: Method for producing polycrystalline silicon
- Patent Title (中): 多晶硅的制造方法
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Application No.: US12190229Application Date: 2008-08-12
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Publication No.: US07691357B2Publication Date: 2010-04-06
- Inventor: Takaaki Shimizu , Kyoji Oguro , Takeshi Aoyama
- Applicant: Takaaki Shimizu , Kyoji Oguro , Takeshi Aoyama
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-229856 20070905
- Main IPC: C01B33/08
- IPC: C01B33/08 ; C07F7/00

Abstract:
A by-product mixture produced when polycrystalline silicon is deposited on a base material in a CVD reactor is made to react with chlorine to form a tetrachlorosilane (STC) effluent in a chlorination reaction vessel, and the tetrachlorosilane (STC) distillate is made to react with hydrogen in a hydrogenation reaction vessel to be converted into trichlorosilane (TCS). In the chlorination step, poly-silane contained in the above described by-product mixture can be efficiently recycled as a raw material for producing the polycrystalline silicon, which can enhance a yield of the production process. In addition, in the chlorination step, methyl chlorosilanes having boiling points close to TCS are hyper-chlorinated to be converted into hyper-chlorinated methyl chlorosilanes having higher boiling points, which facilitates the hyper-chlorinated methyl chlorosilanes to be separated into high concentration, and reduces carbon contamination of the polycrystalline silicon.
Public/Granted literature
- US20090060822A1 METHOD FOR PRODUCING POLYCRYSTALLINE SILICON Public/Granted day:2009-03-05
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