Invention Grant
- Patent Title: Method for forming organic/inorganic hybrid insulation film
- Patent Title (中): 形成有机/无机复合绝缘膜的方法
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Application No.: US11023418Application Date: 2004-12-29
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Publication No.: US07691453B2Publication Date: 2010-04-06
- Inventor: Nobuo Aoi
- Applicant: Nobuo Aoi
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2004-037050 20040213
- Main IPC: H05H4/24
- IPC: H05H4/24

Abstract:
A method for forming an organic/inorganic hybrid insulation film includes the following steps. An organic silicon compound containing siloxane bonds is vaporized, the vaporized organic silicon compound is transported to a reaction chamber maintaining the compound in a monomer state, and then, the organic/inorganic hybrid insulation film having a main chain structure where siloxane parts and organic molecule parts are alternately combined on a substrate installed in the reaction chamber is formed by plasma-polymerizing the vaporized organic silicon compound in the reaction chamber.
Public/Granted literature
- US20050181594A1 Method for forming organic/inorganic hybrid insulation film Public/Granted day:2005-08-18
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