Invention Grant
- Patent Title: Crystallization mask, crystallization method, and method of manufacturing thin film transistor including crystallized semiconductor
- Patent Title (中): 结晶掩模，结晶方法和制造包括结晶半导体的薄膜晶体管的方法
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Application No.: US11523932Application Date: 2006-09-19
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Publication No.: US07691545B2Publication Date: 2010-04-06
- Inventor: Su-Gyeong Lee , Hyun-Jae Kim , Myung-Koo Kang
- Applicant: Su-Gyeong Lee , Hyun-Jae Kim , Myung-Koo Kang
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Innovation Counsel LLP
- Priority: KR10-2003-0082222 20031119
- Main IPC: G03F1/00
- IPC: G03F1/00
Abstract:
A crystallization mask for laser illumination for converting amorphous silicon into polysilicon is provided, which includes: a plurality of transmissive areas having a plurality of first slits for adjusting energy of the laser illumination passing through the mask; and an opaque area.
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