Invention Grant
- Patent Title: Photomask blank and photomask
- Patent Title (中): 光掩模空白和光掩模
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Application No.: US11662183Application Date: 2005-09-08
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Publication No.: US07691546B2Publication Date: 2010-04-06
- Inventor: Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
- Applicant: Hiroki Yoshikawa , Yukio Inazuki , Satoshi Okazaki , Takashi Haraguchi , Masahide Iwakata , Mikio Takagi , Yuichi Fukushima , Tadashi Saga
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2004-263161 20040910
- International Application: PCT/JP2005/016511 WO 20050908
- International Announcement: WO2006/028168 WO 20060316
- Main IPC: G03F1/00
- IPC: G03F1/00

Abstract:
A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.
Public/Granted literature
- US20080063950A1 Photomask Blank and Photomask Public/Granted day:2008-03-13
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