Invention Grant
- Patent Title: Immersion lithography edge bead removal
- Patent Title (中): 浸没光刻边缘珠去除
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Application No.: US11337986Application Date: 2006-01-24
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Publication No.: US07691559B2Publication Date: 2010-04-06
- Inventor: Ching-Yu Chang , C. C. Ke , Vincent Yu
- Applicant: Ching-Yu Chang , C. C. Ke , Vincent Yu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/004
Abstract:
A method of performing immersion lithography on a semiconductor wafer is provided. The method includes providing a layer of resist onto a surface of the semiconductor wafer. Next, an edge-bead removal process spins the wafer at a speed greater than 1000 revolutions per minute and dispenses solvent through a nozzle while the wafer is spinning. Then, the resist layer is exposed using an immersion lithography exposure system.
Public/Granted literature
- US20070003879A1 Immersion lithography edge bead removal Public/Granted day:2007-01-04
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