Invention Grant
- Patent Title: Method for improved growth of semipolar (Al,In,Ga,B)N
- Patent Title (中): 改善半极性（Al，In，Ga，B）N生长的方法
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Application No.: US11655573Application Date: 2007-01-19
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Publication No.: US07691658B2Publication Date: 2010-04-06
- Inventor: John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant: John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant Address: US CA Oakland JP Saitama Prefecture
- Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee Address: US CA Oakland JP Saitama Prefecture
- Agency: Gates & Cooper LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/00
Abstract:
A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1−xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1−xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
Public/Granted literature
- US20070218703A1 Method for improved growth of semipolar (Al,In,Ga,B)N Public/Granted day:2007-09-20
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