Invention Grant
- Patent Title: Process for making an organic field effect transistor
- Patent Title (中): 制造有机场效应晶体管的工艺
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Application No.: US11666751Application Date: 2005-10-04
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Publication No.: US07691665B2Publication Date: 2010-04-06
- Inventor: Beverley Anne Brown , Janos Veres , Simon Dominic Ogier
- Applicant: Beverley Anne Brown , Janos Veres , Simon Dominic Ogier
- Applicant Address: DE Darmstadt
- Assignee: Merck Patent GmbH
- Current Assignee: Merck Patent GmbH
- Current Assignee Address: DE Darmstadt
- Agency: Millen, White, Zelano & Branigan, P.C.
- Priority: GB0424342.4 20041103
- International Application: PCT/EP2005/010661 WO 20051004
- International Announcement: WO2006/048092 WO 20060511
- Main IPC: H01L51/40
- IPC: H01L51/40
Abstract:
The present invention relates to a process for reducing the mobility of an semiconductor (OSC) layer in an electronic device, which has a semiconducting channel area, in specific areas outside said channel area by applying an oxidzing agent to the OSC layer.
Public/Granted literature
- US20070259477A1 Process for Making an Organic Field Effect Transistor Public/Granted day:2007-11-08
Information query
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