Invention Grant
US07691666B2 Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
有权
制造包含氧化锌基半导体材料的薄膜晶体管和由此制成的晶体管的方法
- Patent Title: Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
- Patent Title (中): 制造包含氧化锌基半导体材料的薄膜晶体管和由此制成的晶体管的方法
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Application No.: US11155436Application Date: 2005-06-16
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Publication No.: US07691666B2Publication Date: 2010-04-06
- Inventor: David H. Levy , Andrea C. Scuderi , Lyn M. Irving
- Applicant: David H. Levy , Andrea C. Scuderi , Lyn M. Irving
- Applicant Address: US NY Rochester
- Assignee: Eastman Kodak Company
- Current Assignee: Eastman Kodak Company
- Current Assignee Address: US NY Rochester
- Agent J. Lanny Tucker
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/16
Abstract:
A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300° C. during fabrication.
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