Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US10579800Application Date: 2005-01-24
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Publication No.: US07691685B2Publication Date: 2010-04-06
- Inventor: Shinji Maekawa , Shunpei Yamazaki , Hironobu Shoji
- Applicant: Shinji Maekawa , Shunpei Yamazaki , Hironobu Shoji
- Applicant Address: JP Kanagawa-Ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-Ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2004-017583 20040126; JP2004-017608 20040126
- International Application: PCT/JP2005/001286 WO 20050124
- International Announcement: WO2005/071478 WO 20050804
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84

Abstract:
In the present circumstances, a film formation method of using spin coating in a manufacturing process is heavily used. As increasing the substrate size in future, the film formation method of using spin coating becomes at a disadvantage in mass production since a mechanism for rotating a large substrate becomes large, and there is many loss of material solution or waste liquid. According to the present invention, in a manufacturing process of a semiconductor device, a microscopic wiring pattern can be realized by delivering selectively photosensitive conductive material solution by droplet discharging, exposing selectively to laser light or the like, and developing. The present invention can reduce drastically costs since a patterning process can be shortened and an amount of material in a process of forming a conductive pattern can be reduced. Accordingly, the present invention can be applied to manufacture a large substrate.
Public/Granted literature
- US20070093002A1 Electric appliance, semiconductor device, and method for manufacturing the same Public/Granted day:2007-04-26
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