Invention Grant
US07691690B2 Methods for forming dual fully silicided gates over fins of FinFet devices
有权
在FinFet设备的翅片上形成双完全硅化栅的方法
- Patent Title: Methods for forming dual fully silicided gates over fins of FinFet devices
- Patent Title (中): 在FinFet设备的翅片上形成双完全硅化栅的方法
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Application No.: US11622586Application Date: 2007-01-12
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Publication No.: US07691690B2Publication Date: 2010-04-06
- Inventor: Huilong Zhu , Zhijiong Luo
- Applicant: Huilong Zhu , Zhijiong Luo
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent Henri D. Schnurmann
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Methods for forming fully silicided gates over fins of FinFet devices are disclosed. The disclosure provides methods for patterning a gate stack over each fin from a polysilicon layer and a polysilicon germanium layer, and then removing the polysilicon germanium layer over one of the fins. The disclosure further includes forming a metal layer over both fins and annealing the FinFet device to form fully silicided gates over each fin of the FinFet device.
Public/Granted literature
- US20080171408A1 METHODS FOR FORMING DUAL FULLY SILICIDED GATES OVER FINS OF FINFET DEVICES Public/Granted day:2008-07-17
Information query
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