Invention Grant
- Patent Title: Substrate processing apparatus and a manufacturing method of a thin film semiconductor device
- Patent Title (中): 基板处理装置及薄膜半导体装置的制造方法
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Application No.: US12232433Application Date: 2008-09-17
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Publication No.: US07691692B2Publication Date: 2010-04-06
- Inventor: Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
- Applicant: Shunpei Yamazaki , Hisashi Ohtani , Hiroyuki Shimada , Mitsunori Sakama , Hisashi Abe , Satoshi Teramoto
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP5-291268 19931026; JP5-347645 19931224; JP5-347646 19931224
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.
Public/Granted literature
- US20090029509A1 Substrate processing apparatus and method and a manufacturing method of a thin film semiconductor device Public/Granted day:2009-01-29
Information query
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