Invention Grant
- Patent Title: Hemi-spherical structure and method for fabricating the same
- Patent Title (中): 半球形结构及其制造方法
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Application No.: US12048006Application Date: 2008-03-13
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Publication No.: US07691696B2Publication Date: 2010-04-06
- Inventor: Ming-Chyi Liu , Chi-Hsin Lo
- Applicant: Ming-Chyi Liu , Chi-Hsin Lo
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8234
Abstract:
Hemi-spherical structure and method for fabricating the same. A device includes discrete pillar regions on a substrate, and a pattern layer on the discrete support structures and the substrate. The pattern layer has hemi-spherical film regions on the discrete support structures respectively, and planarized portions on the substrate between the hemi-spherical film regions. Each of the hemi-spherical film regions in a position corresponding to each of the support structures serves as a hemi-spherical structure.
Public/Granted literature
- US20080166883A1 HEMI-SPHERICAL STRUCTURE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2008-07-10
Information query
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