Invention Grant
- Patent Title: Power composite integrated semiconductor device and manufacturing method thereof
- Patent Title (中): 功率复合集成半导体器件及其制造方法
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Application No.: US12213712Application Date: 2008-06-24
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Publication No.: US07691697B2Publication Date: 2010-04-06
- Inventor: Hiroyasu Itou
- Applicant: Hiroyasu Itou
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2004-150745 20040520; JP2004-328123 20041111
- Main IPC: H01L29/72
- IPC: H01L29/72

Abstract:
A high-reliability power composite integrated semiconductor device uses thick copper electrodes as current collecting electrodes of a power device portion to resist wire resistance needed for reducing ON-resistance. Furthermore, wire bonding connection of the copper electrodes is secured, and also the time-lapse degradation under high temperature which causes diffusion of copper and corrosion of copper is suppressed. Still furthermore, direct bonding connection can be established to current collecting electrodes in the power device portion, and also established to a bonding pad formed on the control circuit portion in the control circuit portion. A pad area at the device peripheral portion which has been hitherto needed is reduced, so that the area of the device is saved, and the manufacturing cost is reduced.
Public/Granted literature
- US20080311740A1 Power composite integrated semiconductor device and manufacturing method thereof Public/Granted day:2008-12-18
Information query
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