Invention Grant
US07691705B2 Method for manufacturing flash memory cell by rie slope etching reflowed photoresist pattern
有权
通过斜面蚀刻回流光致抗蚀剂图案来制造闪存单元的方法
- Patent Title: Method for manufacturing flash memory cell by rie slope etching reflowed photoresist pattern
- Patent Title (中): 通过斜面蚀刻回流光致抗蚀剂图案来制造闪存单元的方法
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Application No.: US11613783Application Date: 2006-12-20
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Publication No.: US07691705B2Publication Date: 2010-04-06
- Inventor: Tae-Ho Kim
- Applicant: Tae-Ho Kim
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2005-0135335 20051230
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/28
Abstract:
A method for manufacturing a flash memory cell with a floating gate and a control gate having an increased coupling ratio due to an increase in gate capacitance. The gate size is increased by reducing a groove width in a photoresist pattern used to define the gate region. The groove width is reduced by employing a slope-etching process to form the photoresist pattern.
Public/Granted literature
- US20070155095A1 METHOD FOR MANUFACTURING FLASH MEMORY CELL Public/Granted day:2007-07-05
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