Semiconductor device structures incorporating voids and methods of fabricating such structures

Invention Grant

US07691712B2 Semiconductor device structures incorporating voids and methods of fabricating such structures 有权

Title translation: 包含空隙的半导体器件结构和制造这种结构的方法

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Patent Title: Semiconductor device structures incorporating voids and methods of fabricating such structures
Patent Title (中): 包含空隙的半导体器件结构和制造这种结构的方法
Application No.: US11425588

Application Date: 2006-06-21
Publication No.: US07691712B2

Publication Date: 2010-04-06
Inventor: Dureseti Chidambarrao , Ricardo Alves Donaton , Jack Allan Mandelman
Applicant: Dureseti Chidambarrao , Ricardo Alves Donaton , Jack Allan Mandelman
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Wood, Herron & Evans, LLP
Main IPC: H01L21/8234
IPC: H01L21/8234

Semiconductor device structures incorporating voids and methods of fabricating such structures

Abstract:

Semiconductor device structures and fabrication methods for field effect transistors in which a gate electrode is provided with an air gap or void disposed adjacent to a sidewall of the gate electrode. The void may be bounded by a dielectric spacer proximate to the sidewall of the gate electrode and a dielectric layer having a spaced relationship with the dielectric spacer. The methods of the invention involve the use of a temporary spacer consisting of a sacrificial material supplied adjacent to the sidewall of the gate electrode, which is removed after the dielectric layer is formed.

Abstract(Chinese):

用于场效应晶体管的半导体器件结构和制造方法，其中栅电极设置有与栅电极的侧壁相邻设置的气隙或空隙。空隙可以由靠近栅电极的侧壁的电介质隔离物和与电介质间隔物具有间隔关系的电介质层界定。本发明的方法涉及使用由邻近栅电极的侧壁提供的牺牲材料组成的临时间隔物，其在形成介电层之后被去除。

Public/Granted literature

US20070296039A1 Semiconductor Device Structures Incorporating Voids and Methods of Fabricating Such Structures Public/Granted day:2007-12-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺