Invention Grant
- Patent Title: Method of fabricating oxide semiconductor device
- Patent Title (中): 氧化物半导体器件的制造方法
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Application No.: US12181579Application Date: 2008-07-29
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Publication No.: US07691715B2Publication Date: 2010-04-06
- Inventor: Nobuyuki Kaji , Hisato Yabuta
- Applicant: Nobuyuki Kaji , Hisato Yabuta
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2005-258268 20050906
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.
Public/Granted literature
- US20080293208A1 METHOD OF FABRICATING OXIDE SEMICONDUCTOR DEVICE Public/Granted day:2008-11-27
Information query
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