Invention Grant
- Patent Title: Method for manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US10544491Application Date: 2004-02-02
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Publication No.: US07691725B2Publication Date: 2010-04-06
- Inventor: Tadahiro Ohmi , Akinobu Teramoto
- Applicant: Tadahiro Ohmi , Akinobu Teramoto
- Applicant Address: JP Sendai
- Assignee: Tadahiro Ohmi
- Current Assignee: Tadahiro Ohmi
- Current Assignee Address: JP Sendai
- Agency: Foley & Lardner LLP
- Priority: JP2003-028085 20030205
- International Application: PCT/JP2004/000983 WO 20040202
- International Announcement: WO2004/070842 WO 20040819
- Main IPC: H01L21/30
- IPC: H01L21/30
Abstract:
An insulating film is formed as a pore-wall protective film (103) on pore walls in a porous layer (102) by the use of a mixed gas plasma of a noble gas and an insulating film forming gas generated by microwave excitation. As a result, the pore-wall protective film can have film properties as a protective film.
Public/Granted literature
- US20060051934A1 Method for manufacturing semiconductor device Public/Granted day:2006-03-09
Information query
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