Invention Grant
US07691735B2 Method for manufacturing metal chips by plasma from a layer comprising several elements
失效
通过等离子体从包含若干元件的层制造金属屑的方法
- Patent Title: Method for manufacturing metal chips by plasma from a layer comprising several elements
- Patent Title (中): 通过等离子体从包含若干元件的层制造金属屑的方法
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Application No.: US12254484Application Date: 2008-10-20
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Publication No.: US07691735B2Publication Date: 2010-04-06
- Inventor: Laurent Grenouillet , Jonathan Garcia , François Marion , Nicolas Olivier , Marion Perrin
- Applicant: Laurent Grenouillet , Jonathan Garcia , François Marion , Nicolas Olivier , Marion Perrin
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Marjama Muldoon Blasiak & Sullivan LLP
- Priority: FR0760347 20071224
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
The invention relates to a method for manufacturing chips composed of at least one electrically conductive material. Such a method comprises the following steps: deposition, on a support, of an alloy comprising at least the electrically conductive material and a second material; exposure of the alloy to plasma etching, in order to cause the desorption of the materials of the alloy not forming part of the composition of the chips, that is at least the second material but not the electrically conductive material; formation of chips composed of at least said electrically conductive material.
Public/Granted literature
- US20090162657A1 METHOD FOR MANUFACTURING METAL CHIPS BY PLASMA FROM A LAYER COMPRISING SEVERAL ELEMENTS Public/Granted day:2009-06-25
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