Minimizing low-k dielectric damage during plasma processing

Invention Grant

US07691736B2 Minimizing low-k dielectric damage during plasma processing 有权

Title translation: 最小化等离子体处理过程中的低k电介质损伤

Please log in to see more content

Patent Title: Minimizing low-k dielectric damage during plasma processing
Patent Title (中): 最小化等离子体处理过程中的低k电介质损伤
Application No.: US11352047

Application Date: 2006-02-10
Publication No.: US07691736B2

Publication Date: 2010-04-06
Inventor: Michael Beck , John A. Fitzsimmons , Karl Hornik , Darryl Restaino
Applicant: Michael Beck , John A. Fitzsimmons , Karl Hornik , Darryl Restaino
Applicant Address: DE Munich
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE Munich
Agency: Slater & Matsil, L.L.P.
Main IPC: H01L21/4763
IPC: H01L21/4763

Minimizing low-k dielectric damage during plasma processing

Abstract:

Embodiments of the invention provide a semiconductor device having dielectric material and its method of manufacture. A method comprises a short (≦2 sec) flash activation of an ILD surface followed by flowing a precursor such as silane, DEMS, over the activated ILD surface. The precursor reacts with the activated ILD surface thereby selectively protecting the ILD surface. The protected ILD surface is resistant to plasma processing damage. The protected ILD surface eliminates the requirement of using a hard mask to protect a dielectric from plasma damage.

Abstract(Chinese):

本发明的实施例提供一种具有介电材料的半导体器件及其制造方法。一种方法包括ILD表面的短（＆nlE; 2秒）闪光激活，随后在活化的ILD表面上流动诸如硅烷DEMS之类的前体。前体与活化的ILD表面反应，从而有选择地保护ILD表面。受保护的ILD表面耐等离子体处理损伤。受保护的ILD表面消除了使用硬掩模来保护电介质免受等离子体损伤的要求。

Public/Granted literature

US20070190804A1 Minimizing low-k dielectric damage during plasma processing Public/Granted day:2007-08-16

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）