Copper process methodology

Invention Grant

US07691737B2 Copper process methodology 有权

Title translation: 铜工艺方法

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Patent Title: Copper process methodology
Patent Title (中): 铜工艺方法
Application No.: US11614770

Application Date: 2006-12-21
Publication No.: US07691737B2

Publication Date: 2010-04-06
Inventor: Charles Ray Mathews , Alex Bierwag , Stuart Litwin
Applicant: Charles Ray Mathews , Alex Bierwag , Stuart Litwin
Applicant Address: US CA Sunnyvale
Assignee: Spansion LLC
Current Assignee: Spansion LLC
Current Assignee Address: US CA Sunnyvale
Agency: Turocy & Watson, LLP
Main IPC: H01L21/4763
IPC: H01L21/4763

Abstract:

A method of deprocessing a semiconductor structure is provided. The method involves removing one or more interlevel dielectric layers and one or more metal components from a frontside of the semiconductor structure. By removing the interlevel dielectric layer and the metal component, the exposed portion of the semiconductor structure can be subjected to an inspection for defects and/or other characteristics by using an inspection tool. The inspection can aid in defect reduction strategies, among other things, when applied to new technology ramp, monitoring of baseline wafer starts, customer returns, etc.

Abstract(Chinese):

提供了半导体结构的去加工方法。该方法包括从半导体结构的前面去除一个或多个层间电介质层和一个或多个金属组分。通过去除层间电介质层和金属部件，可以通过使用检查工具对半导体结构的暴露部分进行缺陷和/或其他特性的检查。检查可以帮助缺陷减少策略，除其他外，应用于新技术坡道，监测基线晶圆启动，客户回报等。

Public/Granted literature

US20080153185A1 COPPER PROCESS METHODOLOGY Public/Granted day:2008-06-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）