Semiconductor device and method of fabricating same

Invention Grant

US07691740B2 Semiconductor device and method of fabricating same 失效

Title translation: 半导体装置及其制造方法

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Patent Title: Semiconductor device and method of fabricating same
Patent Title (中): 半导体装置及其制造方法
Application No.: US12250772

Application Date: 2008-10-14
Publication No.: US07691740B2

Publication Date: 2010-04-06
Inventor: Takahiko Yoshizawa , Noriaki Matsunaga , Naofumi Nakamura
Applicant: Takahiko Yoshizawa , Noriaki Matsunaga , Naofumi Nakamura
Applicant Address: JP Tokyo
Assignee: Kabushiki Kaisha Toshiba
Current Assignee: Kabushiki Kaisha Toshiba
Current Assignee Address: JP Tokyo
Agency: Foley & Lardner LLP
Priority: JP2004-318375 20041101
Main IPC: H01L21/4763
IPC: H01L21/4763

Semiconductor device and method of fabricating same

Abstract:

The semiconductor device fabrication method according the present invention having, forming an interlayer dielectric film containing carbon above a semiconductor substrate, forming a protective film on that portion of the interlayer dielectric film, which is close to the surface and in which the carbon concentration is low, forming a trench by selectively removing a desired region of the interlayer dielectric film and protective film, such that the region extends from the surface of the protective film to the bottom surface of the interlayer dielectric film, supplying carbon to the interface between the interlayer dielectric film and protective film, and forming a conductive layer by burying a conductive material in the trench.

Abstract(Chinese):

根据本发明的半导体器件制造方法，在半导体衬底上形成含有碳的层间电介质膜，在层间电介质膜的与表面接近的部分形成保护膜，其中碳浓度低通过选择性地去除层间电介质膜和保护膜的期望区域形成沟槽，使得该区域从保护膜的表面延伸到层间电介质膜的底表面，将碳供应到层间电介质膜和保护膜，并且通过在沟槽中埋入导电材料形成导电层。

Public/Granted literature

US20090042358A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME Public/Granted day:2009-02-12

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）