A silicon nitride layer is formed on at least a back side of a silicon wafer substrate of a semiconductor device. An oxide layer is formed on at least the silicon nitride layer on the back side of the substrate. The oxide layer protects the silicon nitride layer during processing of the device. The oxide layer is removed prior to packaging the device. After components have been formed on a front side of the substrate opposite the back side, packaging is attached to the silicon nitride layer. The components provide a functionality of the device. The silicon nitride layer completely remains on the back side of the substrate after fabrication of the device has been completed. The silicon nitride layer is adapted to minimize and does minimize bowing of the device.