Invention Grant
- Patent Title: Through-silicon via and method for forming the same
- Patent Title (中): 硅通孔及其形成方法
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Application No.: US11647954Application Date: 2006-12-29
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Publication No.: US07691748B2Publication Date: 2010-04-06
- Inventor: Kwon Whan Han
- Applicant: Kwon Whan Han
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2006-0096718 20060930
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method for forming a through-silicon via includes the steps of defining a groove in each chip of a wafer which has a plurality of semiconductor chips; applying liquid polymer on the wafer to fill the groove; forming an insulation layer on a sidewall of the groove through patterning the polymer; forming a metal layer to fill the groove which is formed with the insulation layer on the sidewall thereof; and back-grinding a backside of the wafer to expose the metal layer filled in the groove.
Public/Granted literature
- US20080079121A1 Through-silicon via and method for forming the same Public/Granted day:2008-04-03
Information query
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