Invention Grant
- Patent Title: Method of forming insulating film and method of manufacturing semiconductor device
- Patent Title (中): 形成绝缘膜的方法和制造半导体器件的方法
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Application No.: US11842534Application Date: 2007-08-21
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Publication No.: US07691758B2Publication Date: 2010-04-06
- Inventor: Takayuki Iwaki
- Applicant: Takayuki Iwaki
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2006-225887 20060822
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A method of forming an insulating film according to one embodiment of the present invention, which is a method of forming an insulating film for use in a semiconductor device, performs thermal oxidation of a tantalum nitride film at a temperature range of 200 to 400 degrees centigrade by a wet oxidation process, whereby a tantalum oxide film is formed as the insulating film.
Public/Granted literature
- US20080050930A1 METHOD OF FORMING INSULATING FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2008-02-28
Information query
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