Invention Grant
US07692021B2 NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds
有权
NPN型低分子芳环化合物和有机半导体以及掺入这种化合物的电子器件
- Patent Title: NPN-type low molecular aromatic ring compounds and organic semiconductors and electronic devices incorporating such compounds
- Patent Title (中): NPN型低分子芳环化合物和有机半导体以及掺入这种化合物的电子器件
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Application No.: US11508925Application Date: 2006-08-24
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Publication No.: US07692021B2Publication Date: 2010-04-06
- Inventor: Eun Jeong Jeong , Joo Young Kim , Hyun Sik Moon , Bang Lin Lee , Kook Min Han , Eun Kyung Lee
- Applicant: Eun Jeong Jeong , Joo Young Kim , Hyun Sik Moon , Bang Lin Lee , Kook Min Han , Eun Kyung Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0004916 20060117
- Main IPC: C07D277/20
- IPC: C07D277/20 ; C07D277/60

Abstract:
Disclosed herein are NPN-type low molecular aromatic ring compounds, organic semiconductor layers formed from such compounds that exhibit improved electrical stability and methods of forming such layers using solution-based processes, for example, spin coating processes performed at or near room temperature. These NPN-type compounds may be used, either singly or in combination, for fabricating organic semiconductor layers in electronic devices. The NPN-type aromatic ring compounds according to example embodiments may be deposited as a solution on a range of substrates to form a coating film that is then subjected to a thermal treatment to form a semiconductor thin film across large substrate surfaces that exhibits reduced leakage currents relative to conventional PNP-type organic semiconductor materials, thus improving the electrical properties of the resulting devices.
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