Invention Grant
- Patent Title: Solid-state imaging device with light-collecting device having sub-wavelength periodic structure, solid-state imaging apparatus and manufacturing method thereof
- Patent Title (中): 具有亚波长周期结构的光收集装置的固态成像装置,固态成像装置及其制造方法
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Application No.: US11423776Application Date: 2006-06-13
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Publication No.: US07692129B2Publication Date: 2010-04-06
- Inventor: Kimiaki Toshikiyo , Takanori Yogo , Motonori Ishii , Toshinobu Matsuno , Kazutoshi Onozawa
- Applicant: Kimiaki Toshikiyo , Takanori Yogo , Motonori Ishii , Toshinobu Matsuno , Kazutoshi Onozawa
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Greenblum & Bernstein P.L.C.
- Priority: JP2005-178585 20050617
- Main IPC: H01L27/00
- IPC: H01L27/00

Abstract:
The present invention provides a solid-state imaging apparatus and the like which is able to support an optical system whose incident angle is wide. Each pixel is 2.25 μm square in size, and includes a distributed index lens (1), a color filter (for example, for green) (2), an Al interconnections (3), a signal transmitting unit (4), a planarized layer (5), a light-receiving device (Si photodiodes) (6), and an Si substrate (7). The two-stage concentric circle structure of the distributed index lens is formed by SiO2 (n=2) with the film thickness 1.2 μm (“grey color”), the film thickness 0.8 μm (“dots pattern”) and the film thickness of 0 μm (“without pattern: white color”), and the medium surrounding the distributed index lens (1)is air (n=1).
Public/Granted literature
- US20060284052A1 SOLID-STATE IMAGING DEVICE, SOLID-STATE IMAGING APPARATUS AND MANUFACTURING METHOD THEREOF Public/Granted day:2006-12-21
Information query
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