Invention Grant
US07692134B2 Variable transfer gate oxide thickness for image sensor 有权
图像传感器的可变传输栅氧化层厚度

Variable transfer gate oxide thickness for image sensor
Abstract:
A light sensor cell includes a photosensitive element, a floating diffusion region, and a gate oxide disposed between the photosensitive element and the floating diffusion region. The gate oxide has a non-uniform thickness, with a greater thickness near the photosensitive element and a lesser thickness near the floating diffusion region. A transfer gate is disposed on the gate oxide. The transfer gate has a non-uniform threshold voltage, with a greater threshold voltage near the photosensitive element and a lesser threshold voltage near the floating diffusion region.
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