Invention Grant
- Patent Title: Variable transfer gate oxide thickness for image sensor
- Patent Title (中): 图像传感器的可变传输栅氧化层厚度
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Application No.: US12054296Application Date: 2008-03-24
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Publication No.: US07692134B2Publication Date: 2010-04-06
- Inventor: Satyadev Nagaraja , Hidetoshi Nozaki
- Applicant: Satyadev Nagaraja , Hidetoshi Nozaki
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman, LLP
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L31/062

Abstract:
A light sensor cell includes a photosensitive element, a floating diffusion region, and a gate oxide disposed between the photosensitive element and the floating diffusion region. The gate oxide has a non-uniform thickness, with a greater thickness near the photosensitive element and a lesser thickness near the floating diffusion region. A transfer gate is disposed on the gate oxide. The transfer gate has a non-uniform threshold voltage, with a greater threshold voltage near the photosensitive element and a lesser threshold voltage near the floating diffusion region.
Public/Granted literature
- US20090236498A1 VARIABLE TRANSFER GATE OXIDE THICKNESS FOR IMAGE SENSOR Public/Granted day:2009-09-24
Information query
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