Invention Grant
- Patent Title: Reactive sputtering process for optimizing the thermal stability of thin chalcogenide layers
- Patent Title (中): 用于优化薄硫族化物层的热稳定性的反应溅射工艺
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Application No.: US11214023Application Date: 2005-08-30
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Publication No.: US07692175B2Publication Date: 2010-04-06
- Inventor: Cay-Uwe Pinnow , Thomas Happ
- Applicant: Cay-Uwe Pinnow , Thomas Happ
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agency: Edell, Shapiro & Finnan, LLC
- Priority: DE102004041905 20040830
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A chalcogenide layer includes a composition of compounds having the formula MmX1-m, where M denotes one or more elements selected from the group consisting of group IVb elements of the periodic system, group Vb elements of the periodic system and transition metals, X denotes one or more elements selected from the group consisting of S, Se and Te, and m has a value of between 0 and 1. The chalcogenide layer further includes an oxygen or nitrogen content in the range from 0.001 atomic % to 75 atomic %.
Public/Granted literature
- US20060043354A1 Reactive sputtering process for optimizing the thermal stability of thin chalcogenide layers Public/Granted day:2006-03-02
Information query
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