Invention Grant
- Patent Title: Light emitting device and method of manufacturing the same
- Patent Title (中): 发光元件及其制造方法
-
Application No.: US11623618Application Date: 2007-01-16
-
Publication No.: US07692186B2Publication Date: 2010-04-06
- Inventor: Shunpei Yamazaki , Masaaki Hiroki , Masakazu Murakami , Hideaki Kuwabara
- Applicant: Shunpei Yamazaki , Masaaki Hiroki , Masakazu Murakami , Hideaki Kuwabara
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2002-014902 20020124
- Main IPC: H01L29/08
- IPC: H01L29/08
Abstract:
To provide a light emitting device high in reliability with a pixel portion having high definition with a large screen. According to a light emitting device of the present invention, on an insulator (24) provided between pixel electrodes, an auxiliary electrode (21) made of a metal film is formed, whereby a conductive layer (20) made of a transparent conductive film in contact with the auxiliary electrode can be made low in resistance and thin. Also, the auxiliary electrode (21) is used to achieve connection with an electrode on a lower layer, whereby the electrode can be led out with the transparent conductive film formed on an EL layer. Further, a protective film (32) made of a film containing hydrogen and a silicon nitride film which are laminated is formed, whereby high reliability can be achieved.
Public/Granted literature
- US20070114921A1 Light Emitting Device and Method of Manufacturing the Same Public/Granted day:2007-05-24
Information query
IPC分类:
