Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11433577Application Date: 2006-05-15
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Publication No.: US07692190B2Publication Date: 2010-04-06
- Inventor: Nobuyuki Katsuki
- Applicant: Nobuyuki Katsuki
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2005-143860 20050517
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/10 ; H01L31/036
Abstract:
The semiconductor device has a fuse and a fuse opening created above the fuse. The fuse is divided into a plurality of lines at a crossing portion where the fuse crosses with an edge of the fuse opening. The plurality of divided lines of the fuse 101 are in parallel with each other and in perpendicular to the edge of the fuse opening.
Public/Granted literature
- US20060273424A1 Semiconductor device Public/Granted day:2006-12-07
Information query
IPC分类:
