Invention Grant
- Patent Title: Wide-bandgap semiconductor devices
- Patent Title (中): 宽带隙半导体器件
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Application No.: US11676329Application Date: 2007-02-19
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Publication No.: US07692198B2Publication Date: 2010-04-06
- Inventor: Robert Frahm , Hock Min Ng , Brijesh Vyas
- Applicant: Robert Frahm , Hock Min Ng , Brijesh Vyas
- Applicant Address: US NJ Murray Hill
- Assignee: Alcatel-Lucent USA Inc.
- Current Assignee: Alcatel-Lucent USA Inc.
- Current Assignee Address: US NJ Murray Hill
- Agency: Hitt Gaines, PC
- Main IPC: H01L29/20
- IPC: H01L29/20
Abstract:
A device 100 comprising a substrate 115 having crystal-support-structures 110 thereon, and a III-V crystal 210. The III-V crystal is on a single contact region 140 of one of the crystal-support-structures. An area of the contact region is no more than about 50 percent of a surface area 320 of the III-V crystal.
Public/Granted literature
- US20080197358A1 WIDE-BANDGAP SEMICONDUCTOR DEVICES Public/Granted day:2008-08-21
Information query
IPC分类:
