Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US11907976Application Date: 2007-10-19
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Publication No.: US07692203B2Publication Date: 2010-04-06
- Inventor: Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
- Applicant: Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
- Applicant Address: JP Tokyo
- Assignee: Hitachi Cable, Ltd.
- Current Assignee: Hitachi Cable, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2006-286484 20061020; JP2006-286485 20061020
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A plurality of semiconductor layers including an active layer 6 and a light extract layer 4, and a reflective metal film 11 are formed in a semiconductor light emitting device. The light extract layer 4 is formed of a plurality of layers 23, 24 having different composition ratios. An irregularity 22 is formed on the layers 23, 24 including an outermost layer to provide a main surface S as a rough-surface.
Public/Granted literature
- US20080093612A1 Semiconductor light emitting device Public/Granted day:2008-04-24
Information query
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