Invention Grant
US07692210B2 Intermeshed guard bands for multiple voltage supply structures on an integrated circuit, and methods of making same
有权
集成电路上的多个电压供应结构的互相配合的保护带及其制造方法
- Patent Title: Intermeshed guard bands for multiple voltage supply structures on an integrated circuit, and methods of making same
- Patent Title (中): 集成电路上的多个电压供应结构的互相配合的保护带及其制造方法
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Application No.: US11466309Application Date: 2006-08-22
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Publication No.: US07692210B2Publication Date: 2010-04-06
- Inventor: Joseph A. Ward
- Applicant: Joseph A. Ward
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Witney LLP
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L29/10 ; H01L21/82
Abstract:
The present invention is generally directed to intermeshed guard bands for multiple voltage supply regions or structures on an integrated circuit, and methods of making same. In one illustrative embodiment, an integrated circuit is provided that comprises a plurality of voltage supply structures formed above a substrate, the plurality of voltage supply structures being at differing voltage levels, and a guard band comprised of at least one doped region formed in the substrate under each of the plurality of voltage supply regions, each of the guard bands being comprised of a plurality of fingers extending from each end of the guard bands.
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