Invention Grant
- Patent Title: Magnetic RAM
- Patent Title (中): 磁性RAM
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Application No.: US11323073Application Date: 2005-12-30
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Publication No.: US07692228B2Publication Date: 2010-04-06
- Inventor: Philippe Boivin
- Applicant: Philippe Boivin
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Wolf, Greenfield & Sacks, P.C.
- Agent Lisa K. Jorgenson; James H. Morris
- Priority: FR0453261 20041230
- Main IPC: H01L27/115
- IPC: H01L27/115
Abstract:
A memory element for a magnetic RAM, having a first magnetic portion in a first recess of a first insulating layer; and a non-magnetic portion and a second magnetic portion in a second recess of a second insulating layer covering the first insulating layer, the second recess exposing the first magnetic portion and a portion of the first insulating layer around the first magnetic portion, the non-magnetic portion being interposed between the first and second magnetic portions.
Public/Granted literature
- US20060145226A1 Magnetic RAM Public/Granted day:2006-07-06
Information query
IPC分类:
