Invention Grant
- Patent Title: Magnetic memory including ferromagnetic yoke and antiferromagnetic layer
- Patent Title (中): 磁记忆包括铁磁轭和反铁磁层
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Application No.: US11430630Application Date: 2006-05-04
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Publication No.: US07692229B2Publication Date: 2010-04-06
- Inventor: Susumu Haratani , Takashi Asatani
- Applicant: Susumu Haratani , Takashi Asatani
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Porzio, Bromberg & Newman, P.C.
- Priority: JP2005-217141 20050727; JP2006-073982 20060317
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
In a magnetic memory 1, a magneto-resistivity effect element 4 is disposed adjacently to a wire 5 for producing a writing magnetic field and further a ferromagnetic body 20 is disposed so as to cover at least part of the wire 5 and consequently orient the state X of magnetization of this ferromagnetic body 20 in one direction. According to this invention, it is made possible to homogenize the magnetic property during the course of writing and implement the writing work efficiently.
Public/Granted literature
- US20070023807A1 Magnetic memory Public/Granted day:2007-02-01
Information query
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