Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US11446220Application Date: 2006-06-05
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Publication No.: US07692233B2Publication Date: 2010-04-06
- Inventor: Takashi Kobayashi , Toshiyuki Mine
- Applicant: Takashi Kobayashi , Toshiyuki Mine
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2005-165854 20050606
- Main IPC: H01L29/788
- IPC: H01L29/788

Abstract:
A technology capable of improving a charge retention characteristic of a nonvolatile memory is provided. In a memory cell in which an interlayer insulating film formed of an ONO film obtained by laminating a lower silicon oxide film, a silicon nitride film, and an upper silicon oxide film is formed between a floating gate formed of a polycrystalline silicon film and a control gate formed of a polycrystalline silicon film, the upper silicon oxide film is formed through LPCVD and is then nitrided through a remote plasma process, thereby introducing nitrogen of, for example, 5 to 6 atom % into the upper surface portion of the upper silicon oxide film.
Public/Granted literature
- US20060273374A1 Semiconductor device and manufacturing method thereof Public/Granted day:2006-12-07
Information query
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