Invention Grant
US07692236B1 Multiple dual bit memory integrated circuit system 有权
多重双位存储器集成电路系统

Multiple dual bit memory integrated circuit system
Abstract:
A multiple dual bit integrated circuit system is provided that includes forming first address lines in a semiconductor substrate and forming a charge-trapping layer over the semiconductor substrate. A semiconductor layer is formed over the charge-trapping layer and second address lines are formed in the semiconductor layer to form a plurality of dual bit locations.
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