Invention Grant
- Patent Title: Multiple dual bit memory integrated circuit system
- Patent Title (中): 多重双位存储器集成电路系统
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Application No.: US11059139Application Date: 2005-02-15
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Publication No.: US07692236B1Publication Date: 2010-04-06
- Inventor: Michael Brennan , Jaeyong Park , Hidehiko Shiraiwa , Satoshi Torii
- Applicant: Michael Brennan , Jaeyong Park , Hidehiko Shiraiwa , Satoshi Torii
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Agent Mikio Ishimaru
- Main IPC: H01L23/62
- IPC: H01L23/62

Abstract:
A multiple dual bit integrated circuit system is provided that includes forming first address lines in a semiconductor substrate and forming a charge-trapping layer over the semiconductor substrate. A semiconductor layer is formed over the charge-trapping layer and second address lines are formed in the semiconductor layer to form a plurality of dual bit locations.
Information query
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