Provided is a highly reliable multi-bit memory cell capable of miniaturization including: a semiconductor substrate with a channel formed therein; diffusion layers arranged at two sides of the channel, for serving as source/drain; an insulating film arranged on a part of the channel; a trap film made of an insulating material having an electron trapping characteristic, arranged on the semiconductor substrate, the diffusion layers and the insulating film, and including trap regions each capable of trapping electrons in at least areas in contact with the semiconductor substrate at two sides of the insulating film; and a gate electrode arranged on the trap film. The trap regions are also formed on side surfaces of the insulating film, and the trap film has a structure in which the trap film is bent upward from the surface of the semiconductor substrate in the trap regions due to the insulating film.