Invention Grant
US07692242B2 Semiconductor device used as high-speed switching device and power device
失效
半导体器件用作高速开关器件和功率器件
- Patent Title: Semiconductor device used as high-speed switching device and power device
- Patent Title (中): 半导体器件用作高速开关器件和功率器件
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Application No.: US11505337Application Date: 2006-08-17
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Publication No.: US07692242B2Publication Date: 2010-04-06
- Inventor: Tomoko Matsudai , Norio Yasuhara , Yusuke Kawaguchi , Kenichi Matsushita
- Applicant: Tomoko Matsudai , Norio Yasuhara , Yusuke Kawaguchi , Kenichi Matsushita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-237763 20050818
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/06
Abstract:
A low resistance layer is formed on a semiconductor substrate, and a high resistance layer formed on the low resistance layer. A source region of a first conductivity type is formed on a surface region of the high resistance layer. A drain region of the first conductivity type is formed at a distance from the source region. A first resurf region of the first conductivity type is formed in a surface region of the high resistance layer between the source region and the drain region. A channel region of a second conductivity type is formed between the source region and the first resurf region. A gate insulating film is formed on the channel region, and a gate electrode formed on the gate insulating film. An impurity concentration in the channel region under the gate electrode gradually lowers from the source region toward the first resurf region.
Public/Granted literature
- US20070040216A1 Semiconductor device used as high-speed switching device and power device Public/Granted day:2007-02-22
Information query
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