The present invention provides a FinFET transistor arrangement produced using a method with the steps: providing a substrate (106, 108); forming an active region (1) on the substrate a fin-like channel region (113b′; 113b″). Formation of the fin-like channel region (113b′; 113b″) has the following steps: forming a hard mask (S1-S4) on the active region (1); anisotropic etching of the active region (1) using the hard mask (S1-S4) forming STI trenches (G1-G5) having an STI oxide filling (9); polishing-back of the STI oxide filling (9); etching-back of the polished-back STI oxide filling (9); selective removal of components of the hard mask forming a modified hard mask (S1′-S4′); anisotropic etching of the active region (1) using the modified hard mask (S1′-S4′) forming widened STI trenches (G1′-G5′), the fin-like channel regions (113b′; 113b″) of the active region (1) remaining for each individual FinFET transistor.