Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11639157Application Date: 2006-12-15
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Publication No.: US07692248B2Publication Date: 2010-04-06
- Inventor: Chang Nam Kim
- Applicant: Chang Nam Kim
- Applicant Address: KR Seoul
- Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Lowe Hauptman Ham & Berner, LLP
- Priority: KR10-2005-0133887 20051229
- Main IPC: H01L23/62
- IPC: H01L23/62
Abstract:
A semiconductor device comprising a substrate having a well region, at least one well pickup region formed on the substrate to surround the well pickup region, a first drain region formed on the substrate to be positioned on one side of the source region, and a first gate electrode formed on the substrate to be positioned between the source region and the first drain region.
Public/Granted literature
- US20070158694A1 Semiconductor device and method of fabricating the same Public/Granted day:2007-07-12
Information query
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