Invention Grant
US07692251B2 Transistor for semiconductor device and method of forming the same
失效
用于半导体器件的晶体管及其形成方法
- Patent Title: Transistor for semiconductor device and method of forming the same
- Patent Title (中): 用于半导体器件的晶体管及其形成方法
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Application No.: US11284957Application Date: 2005-11-23
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Publication No.: US07692251B2Publication Date: 2010-04-06
- Inventor: Sung Woong Chung , Sang Don Lee
- Applicant: Sung Woong Chung , Sang Don Lee
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2005-0066270 20050721
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/00
Abstract:
Disclosed herein is a transistor for a semiconductor device and a method of forming the same. According to the present invention, a novel transistor structure combining a plane channel transistor and a fin-type channel transistor formed on the semiconductor substrate is provided to secure a sufficient channel width as compared to that of the plane channel transistor, thereby satisfying drive current regulated for the transistor.
Public/Granted literature
- US20070020902A1 Transistor for semiconductor device and method of forming the same Public/Granted day:2007-01-25
Information query
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