Invention Grant
- Patent Title: EEPROM array with well contacts
- Patent Title (中): 具有良好触点的EEPROM阵列
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Application No.: US11567805Application Date: 2006-12-07
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Publication No.: US07692252B2Publication Date: 2010-04-06
- Inventor: Atsuhiro Sato , Kikuko Sugimae , Masayuki Ichige
- Applicant: Atsuhiro Sato , Kikuko Sugimae , Masayuki Ichige
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-100955 20050331
- Main IPC: H01L29/24
- IPC: H01L29/24 ; G11C16/04

Abstract:
A semiconductor integrated circuit device includes a cell well, a memory cell array formed on the cell well and having a memory cell area and cell well contact area, first wiring bodies arranged in the memory cell area, and second wiring bodies arranged in the cell well contact area. The layout pattern of the second wiring bodies is the same as the layout pattern of the first wiring bodies. The cell well contact area comprises cell well contacts that have the same dopant type as the cell well and that function as source/drain regions of dummy transistors formed in the cell well contact area.
Public/Granted literature
- US20070096218A1 EEPROM ARRAY WITH WELL CONTACTS Public/Granted day:2007-05-03
Information query
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