Invention Grant
US07692257B2 Ultrasonic sensor comprising a metal/ferroelectric/metal/insulator/semiconductor structure
有权
包括金属/铁电/金属/绝缘体/半导体结构的超声波传感器
- Patent Title: Ultrasonic sensor comprising a metal/ferroelectric/metal/insulator/semiconductor structure
- Patent Title (中): 包括金属/铁电/金属/绝缘体/半导体结构的超声波传感器
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Application No.: US10549364Application Date: 2004-03-05
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Publication No.: US07692257B2Publication Date: 2010-04-06
- Inventor: Makoto Ishida , Kazuaki Sawada , Daisuke Akai , Mikako Yokawa , Keisuke Hirabayashi
- Applicant: Makoto Ishida , Kazuaki Sawada , Daisuke Akai , Mikako Yokawa , Keisuke Hirabayashi
- Applicant Address: JP Toyohashi-shi
- Assignee: National University Corporation Toyohashi University of Technology
- Current Assignee: National University Corporation Toyohashi University of Technology
- Current Assignee Address: JP Toyohashi-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2003-071584 20030317
- International Application: PCT/JP2004/002889 WO 20040305
- International Announcement: WO2004/084322 WO 20040930
- Main IPC: H01L29/84
- IPC: H01L29/84
Abstract:
A semiconductor element, a semiconductor sensor, and a semiconductor memory element are provided, in which an MFMIS structure having a lower electrode and an integrated circuit can be integrated. An epitaxially grown γ-Al2O3 single crystal film (2) is disposed on a semiconductor single crystal substrate (1), and an epitaxial single crystal Pt thin film (3) is disposed on the γ-Al2O3 single crystal film (2).
Public/Granted literature
- US20060278907A1 Semiconductor element, semiconductor sensor and semiconductor memory element Public/Granted day:2006-12-14
Information query
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