Invention Grant
- Patent Title: Solid state imaging device and manufacturing method thereof
- Patent Title (中): 固态成像装置及其制造方法
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Application No.: US11907791Application Date: 2007-10-17
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Publication No.: US07692260B2Publication Date: 2010-04-06
- Inventor: Hiroaki Takao
- Applicant: Hiroaki Takao
- Applicant Address: JP Tokyo
- Assignee: Fujifilm Corporation
- Current Assignee: Fujifilm Corporation
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2006-283733 20061018
- Main IPC: H01L31/0232
- IPC: H01L31/0232

Abstract:
A light shielding film, an insulating layer, a planarizing layer, and a color filter are formed consecutively on a semiconductor substrate having plural photodiodes in a matrix arrangement. A transparent conductive film is formed on the color filter, and micro-lenses are formed directly on the conductive film such that they reside above each photodiode. Static charges on a surface of each micro-lens are discharged to the conductive film, and static charge buildup on the micro-lenses is therefore prevented.
Public/Granted literature
- US20080093696A1 Solid state imaging device and manufacturing method thereof Public/Granted day:2008-04-24
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