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US07692260B2 Solid state imaging device and manufacturing method thereof 有权
固态成像装置及其制造方法

Solid state imaging device and manufacturing method thereof
Abstract:
A light shielding film, an insulating layer, a planarizing layer, and a color filter are formed consecutively on a semiconductor substrate having plural photodiodes in a matrix arrangement. A transparent conductive film is formed on the color filter, and micro-lenses are formed directly on the conductive film such that they reside above each photodiode. Static charges on a surface of each micro-lens are discharged to the conductive film, and static charge buildup on the micro-lenses is therefore prevented.
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