There is provided a semiconductor device excellent in reliability. The semiconductor device is comprised of a semiconductor substrate, an insulating portion having a multilayer insulating film composed of an etch stopper film, an insulating film, an etch stopper film, an insulating film, an etch stopper film and an insulating film provided on an upper portion of the semiconductor, fuses provided on the insulating portion, and a seal ring composed of a copper containing metal film, a barrier metal film, a copper containing metal film and a barrier metal film embedded in the insulating portion so as to surround a region just below the fuses.