Reinforced semiconductor structures are provided. An exemplary embodiment of a reinforced semiconductor structure comprises a semiconductor wafer comprising a plurality of dielectric layers formed thereon. At least one scribe line region is defined over the semiconductor wafer, separating the semiconductor wafer with at least two active regions thereover. A plurality of first non-dielectric pillars are formed in the topmost layer of the dielectric layers in the scribe line region and surround the test pad along a periphery. A plurality of second non-dielectric pillars and first vias are formed in a first low-k dielectric layer underlying the topmost low-k layer in the scribe line region, wherein the second non-dielectric pillars electrically connect the first non-dielectric pillars by the first vias, respectively.