Invention Grant
- Patent Title: Semiconductor devices with improved heat dissipation and method for fabricating same
- Patent Title (中): 具有改善的散热的半导体器件及其制造方法
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Application No.: US10217089Application Date: 2002-08-12
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Publication No.: US07692289B2Publication Date: 2010-04-06
- Inventor: Li Cai , James M. Van Hove , Amanda Jo Jepson
- Applicant: Li Cai , James M. Van Hove , Amanda Jo Jepson
- Applicant Address: US MN Eden Prairie
- Assignee: ADC Telecommunications, Inc.
- Current Assignee: ADC Telecommunications, Inc.
- Current Assignee Address: US MN Eden Prairie
- Agency: Carlson, Caspers, Vandenburgh & Lindquist
- Main IPC: H01L23/10
- IPC: H01L23/10

Abstract:
The present invention is directed to improving the efficiency of removing heat from semiconductor devices. In addition, the method of manufacturing the improved devices has the potential of eliminating a key step in the traditional production process where the chips are highly susceptible to mechanical damage. A semiconductor element includes a semiconductor substrate having a heat removal side and a heat producing region, and at least one superstrate semiconductor layer defining the heat producing region. The heat removal side of the semiconductor substrate includes at least one recess region which extends closer to the heat-generating region than the remainder of the heat removal surface.
Public/Granted literature
- US20040026779A1 Semiconductor devices with improved heat dissipation and method for fabricating same Public/Granted day:2004-02-12
Information query
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